Magnetron, magnetron sputtering chamber, and magnetron sputtering apparatus

A magnetron sputtering chamber, configured to deposit magnetic thin films, and comprising a magnetron, wherein:

• the magnetron has a rotation center and includes a first outer magnetic pole and a first inner magnetic pole of opposite polarities, wherein:
• the first outer magnetic pole includes a first sub-magnetic pole having an arc, two second sub-magnetic poles with each having an arc, and two third sub-magnetic poles with each having an arc, wherein:
• two ends of the first sub-magnetic pole are respectively connected to one end of each of the two third sub-magnetic poles, another end of each of the two third sub-magnetic poles is connected to one end of each of the two second sub-magnetic poles, and
• centers of the first sub-magnetic pole and the two second sub-magnetic poles coincide with the rotation center,
• the first inner magnetic pole is located on an inner side of the first outer magnetic pole, and the first inner magnetic pole includes an integral circular arc,
• a first magnetic field track is formed between the first inner magnetic pole and the first outer magnetic pole, and
• a straight line starting from the rotation center and along one of radial directions passes through the first magnetic field track at least twice in succession, and magnetic-field directions at two positions of the first magnetic field track that the straight line passes through twice in succession are opposite to each other;
• the magnetron rotates around the rotation center to scan a surface of a target;
• and
• a bias magnetic field device for forming a horizontal magnetic field is disposed in the magnetron sputtering chamber.