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US 10,854,430 B2Granted
Plasma etching method
AssigneeTokyo Electron Limited
InventorTakayuki Katsunuma
Life of this patent
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Abstract
In a plasma etching method, a deposit containing an element forming an upper electrode is deposited on a metal-containing mask having a predetermined pattern while sputtering the upper electrode by a plasma of a first processing gas. Then, an etching target film is etched by a plasma of a second processing gas while using the metal-containing mask on which the deposit is deposited as a mask.
Claims19
A plasma etching method for a processing target object on which an etching target film and a metal-containing mask having a predetermined pattern are laminated in the order, comprising:
- sputtering an upper electrode of a plasma etching apparatus by a plasma of a first processing gas, for depositing a deposit, which contains an element forming the upper electrode on the metal-containing mask having the predetermined pattern, wherein the element forming the upper electrode contains silicon;
- and
- etching the etching target film by a plasma of a second processing gas while using the metal-containing mask on which the deposit is deposited as a mask.
Dependencies are inferred from the claim text.