Ion implanter and method of controlling ion implanter
AssigneeSumitomo Heavy Industries Ion Technology Co., Ltd.
InventorHaruka Sasaki
Life of this patent
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Abstract
A mass analyzer includes a mass analyzing magnet that applies a magnetic field to ions extracted from an ion source to deflect the ions, a mass analyzing slit that is provided downstream of the mass analyzing magnet and allows an ion of a desired ion species among the deflected ions to selectively pass, and a lens device that is provided between the mass analyzing magnet and the mass analyzing slit and applies a magnetic field and/or an electric field to the ion beam to adjust the convergence or divergence of a ion beam. The mass analyzer changes a focal point of the ion beam in a predetermined adjustable range between an upstream side and a downstream side of the mass analyzing slit with the lens device to adjust mass resolution.
Claims17
An ion implanter comprising:
- an ion beam generating unit that includes an ion source, an extraction electrode, and a mass analyzer,
- wherein the mass analyzer includes
- a mass analyzing magnet that applies a magnetic field to ions extracted from the ion source by the extraction electrode to deflect the ions,
- a mass analyzing slit that is provided downstream of the mass analyzing magnet and allows an ion of a desired ion species among the deflected ions to selectively pass, and
- a lens device that is provided between the mass analyzing magnet and the mass analyzing slit and applies a magnetic field to the ion beam directed toward the mass analyzing slit to adjust a convergence or divergence of the ion beam, and
- an intensity of the magnetic field applied to the ion beam passing through the lens device is proportional to an intensity of the magnetic field applied to the ion beam passing through the mass analyzing magnet.
An ion implanter comprising:
- an ion beam generating unit that includes an ion source, an extraction electrode, and a mass analyzer,
- wherein the mass analyzer includes
- a mass analyzing magnet that applies a magnetic field to ions extracted from the ion source by the extraction electrode to deflect the ions,
- a mass analyzing slit that is provided downstream of the mass analyzing magnet and allows an ion of a desired ion species among the deflected ions to selectively pass, and
- a lens device that is provided between the mass analyzing magnet and the mass analyzing slit and applies a magnetic field to the ion beam directed toward the mass analyzing slit to adjust the convergence or divergence of a ion beam, and
- an intensity of the magnetic field applied to the ion beam passing through the mass analyzing magnet is proportional to (2mE)½/q, and an intensity applied to the ion beam passing through the lens device is proportional to E/q, where E is an energy, m is a mass, and q is a charge of a target ion.
A method of controlling an ion implanter including an ion beam generating unit that includes an ion source, an extraction electrode, and a mass analyzer,
- wherein the mass analyzer includes
- a mass analyzing magnet that applies a magnetic field to ions extracted from the ion source by the extraction electrode to deflect the ions,
- a mass analyzing slit that is provided downstream of the mass analyzing magnet and allows an ion of a desired ion species among the deflected ions to selectively pass, and
- a lens device that is provided between the mass analyzing magnet and the mass analyzing slit and applies at least one of a magnetic field and an electric field to the ion beam directed toward the mass analyzing slit to adjust a convergence or divergence of the ion beam, and
- the method comprises
- calculating mass resolution of the mass analyzer which resolves the ion passing through the mass analyzing slit, and
- changing a focal point of the ion beam, which passes through the mass analyzing slit, in a predetermined adjustable range between an upstream side and a downstream side of the mass analyzing slit with the lens device to increase mass resolution in a case in which the calculated mass resolution is smaller than a target value.
Dependencies are inferred from the claim text.