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US 10,854,372 B2Granted
Stacked metal inductor
AssigneeIntel IP Corporation
InventorsChi-Taou Robert Tsai, Lillian G. Lent, Curtiss D. Roberts, Cindy Muir
Life of this patent
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Abstract
An inductor has a conductor layer formed by multiple concentric co-planar turns of a first metal layer (e.g., ultra-thick metal (UTM)) adapted to receive current at a frequency of at least one gigahertz. The multiple turns of the first metal layer proceed from an innermost turn to an outermost turn, and a stacking layer of a second metal is provided over each of the first metal layer turns except at least the innermost turn, thereby optimizing the Q of the inductor.
Claims20
An inductor, comprising:
- a conductor layer including a plurality of concentric co-planar turns of a first metal layer adapted to receive current at a frequency of at least one gigahertz, the plurality of concentric co-planar turns of the first metal layer proceeding from an innermost turn to an outermost turn;
- and
- a second metal layer formed directly over and making electrical contact with each of the first metal layer turns except (i) at least the innermost first metal layer turn, and (ii) at one or more crossovers between each of the plurality of turns of the first metal layer,
- wherein the second metal layer has a higher resistance than the first metal layer.
1 more element
An inductor comprising:
- a conductor layer comprising at least three concentric co-planar turns of a first metal layer adapted to receive current at a frequency of at least one gigahertz, the at least three turns of the first metal layer proceeding from an innermost turn to an outermost turn;
- and
- a second metal layer formed directly over and making electrical contact with all of the first metal layer turns except (i) the innermost first metal layer turn, (ii) a next-to-innermost first metal layer turn, and (iii) at one or more crossovers between each of the at least three concentric co-planar turns of the first metal layer,
- wherein the second metal layer has a higher resistance than the first metal layer.
1 more element
A method for manufacturing an inductor, comprising:
- forming a conductor layer having a plurality of concentric co-planar turns of a first metal layer adapted to receive current at a frequency of at least one gigahertz, the plurality of turns of the first metal layer proceeding from an innermost turn to an outermost turn;
- and
- forming a second metal layer directly over the first metal layer to make electrical contact with each of the first metal layer turns except (i) at least the innermost first metal layer turn, and (ii) at one or more crossovers between each of the plurality of concentric co-planar turns of the first metal layer,
- wherein the second metal layer has a higher resistance than the first metal layer.
1 more element
Dependencies are inferred from the claim text.