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US 10,854,307 B2Granted
Apparatuses and/or methods for operating a memory cell as an anti-fuse
AssigneeMicron Technology, Inc.
InventorAndrea Redaelli
Life of this patent
Estimating the term…
Abstract
Embodiments disclosed herein relate to operating a memory cell as an anti-fuse, such as for use in phase change memory, for example.
Claims20
A method comprising:
- selecting a memory cell for time programmable operation, the memory cell operable for storing one of a plurality of reprogrammable states;
- and
- applying a bias to the memory cell based at least in part on the selecting, wherein applying the bias forms a resistance path in the memory cell corresponding to a one-time programmable state of the memory cell that is different than the plurality of reprogrammable states.
A memory device, comprising:
- a memory cell operable to store one of a plurality of reprogrammable states;
- and
- a selector operable to form a resistance path in the memory cell corresponding to a one-time programmable state of the memory cell that is different than the plurality of reprogrammable states.
A memory device, comprising:
- a memory array including a plurality of memory cells that are each operable to store one of a plurality of reprogrammable states;
- a first selector configured for providing a first bias, the first bias to form a first resistance path in a first memory cell that corresponds to a first one-time programmable state that is different than the plurality of reprogrammable states;
- and
- a second selector configured for providing a second bias, the second bias to form a second resistance path in a second memory cell corresponding to a second one-time programmable state that is different than the first one-time programmable state and different than the plurality of reprogrammable states.
1 more element
Dependencies are inferred from the claim text.