Semiconductor device and programming method of the semiconductor device
AssigneeSK hynix Inc.
InventorsJi Hyun Seo, Bong Yeol Park, Hee Youl Lee, Han Soo Joo
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Abstract
A semiconductor device includes strings each having a plurality of memory cells. The strings are coupled between a common source line and a bit line. A method of operating the semiconductor device includes applying a pre-program voltage to a selected word line coupled to a selected memory cell and to an unselected word line coupled to an unselected memory cell adjacent to the selected memory cell among the plurality of memory cells. The method further includes applying a first program voltage to the selected word line.
Claims20
A method of operating a semiconductor device, wherein the semiconductor device comprises at least one string including a plurality of memory cells and being coupled between a common source line and a bit line, the method comprising:
- applying a pre-program voltage to a selected word line coupled to a selected memory cell among the plurality of memory cells;
- applying the pre-program voltage to an unselected word line coupled to an unselected memory cell adjacent to the selected memory cell;
- applying a pass voltage to remaining unselected word lines, wherein a level of the pass voltage is lower than a level of the pre-program voltage;
- and
- applying a first program voltage to the selected word line.
A semiconductor device comprising:
- a memory string coupled between a common source line and a bit line, wherein the memory string comprises a plurality of memory cells;
- a plurality of word lines coupled to the plurality of memory cells, respectively;
- and
- a control logic configured to apply a pre-program voltage to a selected word line among the plurality of word lines and to a first unselected word line adjacent to the selected word line, to apply a pass voltage having a lower level than the pre-program voltage to a second unselected word line away from the selected word line than the first unselected word line, and then to apply a program voltage to the selected word line.
A semiconductor device comprising:
- stacked word lines;
- a channel layer passing through the stacked word lines;
- and
- a memory layer enclosing the channel layer,
- wherein the semiconductor device is configured to apply a pre-program voltage to a selected word line and to an unselected word line adjacent to the selected word line, to apply a pass voltage having a lower level than the pre-program voltage to remaining unselected word lines, and then to apply a program voltage to the selected word line.
Dependencies are inferred from the claim text.