Strap cell design for static random access memory (SRAM) array

A static random access memory (SRAM) array, comprising:

• a first bit cell array and a second bit cell array arranged along a first direction;
• a strap cell arranged in a second direction and positioned between the first bit cell array and the second bit cell array along the first direction,
• wherein the strap cell comprises:
• a first strap column comprising a first P-type well region and two first N-type well regions, wherein the two first N-type well regions are separated with each other;
• and
• a second strap column adjacent to the first strap column along the second direction, wherein the second strap column comprises:
• a second N-type well region and two second P-type well regions, wherein the two second P-type well regions are separated with each other, the first P-type well region is arranged with the second N-type well region in the second direction, and the two first N-type well regions are arranged with the two second P-type well regions in the second direction;
• a heavily doped P-type region overlying the first P-type well region and the two first N-type well regions of the first strap column;
• a heavily doped N-type region overlying the second N-type well region and the two second P-type well regions of the second strap column;
• and
• a deep N-type well region underlying the two first N-type well regions and the second N-type well region.

A static random access memory (SRAM) array, comprising:

• a first bit cell array and a second bit cell array arranged along a first direction;
• a strap cell arranged in a second direction and positioned between the first bit cell array and the second bit cell array along the first direction,
• wherein the strap cell comprises:
• a first strap column comprising a first P-type well region and two first N-type well regions separated by the first P-type well region;
• and
• a second strap column adjacent to the first strap column along the second direction, wherein the second strap column comprises:
• a second N-type well region and two second P-type well regions separated by the second N-type well region, wherein a width of the first P-type well region in the second direction is less than a width of the second P-type well region in the second direction;
• a heavily doped P-type region overlying the first P-type well region and the two first N-type well regions of the first strap column;
• a heavily doped N-type region overlying the second N-type well region and the two second P-type well regions of the second strap column;
• and
• a deep N-type well region underlying the two first N-type well regions and the second N-type well region.