Apparatuses and methods for controlling word line discharge
AssigneeMicron Technology, Inc.
InventorsToshiyuki Sato, Shinichi Miyatake
Life of this patent
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Abstract
Apparatuses and methods for controlling the discharge of subword lines are described. The rate of discharge and/or the voltage level discharged to may be controlled. In some embodiments, a main word line may be driven to multiple low potentials to control a discharge of a subword line. In some embodiments, a first word driver line signal and/or a second word driver line signal may be reset to control a discharge of a subword line. In some embodiments, a combination of driving the main word line and the first word driver line signal and/or the second word driver line signal resetting may be used to control a discharge of the subword line.
Claims20
An apparatus, comprising:
- a subword driver configured to drive a subword line, wherein the subword driver includes a transistor coupled to the subword line at a first node and configured to be coupled to a low potential at a second node;
- a word driver control circuit configured to provide a first control signal responsive to a reset signal;
- a word driver coupled to the word driver control circuit and configured to provide a first driving signal to a gate of the transistor of the subword driver, wherein the word driver is further configured to temporarily transition the first driving signal to an inactive state during a memory access operation responsive to the first control signal.
A method comprising:
- driving a first driving signal to an active state at least partially responsive to an activation command during a memory access operation;
- driving the first driving signal to an inactive state during the memory access operation responsive to an active reset signal;
- and
- driving the first driving signal to the active state responsive to an inactive reset signal.
A method comprising:
- temporarily activating a transistor coupled between a low potential and a subword line during a memory operation, wherein the subword line is discharged toward the low potential when the transistor is activated;
- deactivating the transistor for a remaining duration of the memory operation
- receiving an activation signal;
- deactivating the transistor responsive to the activation signal;
- receiving a reset signal, wherein the transistor is temporarily activated responsive to the reset signal;
- and
- receiving a precharge signal, wherein the transistor is deactivated responsive to the precharge signal.
Dependencies are inferred from the claim text.