Efficient thermally-assisted switching
AssigneeVathys, Inc.
InventorTapabrata Ghosh
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Abstract
Disclosed are systems and methods for improving the performance of magnetoresistive random access memory (MRAM). MRAM is one of the promising potential replacements for existing DRAM and SRAM memory devices due to the many advantages of the technology which include non-volatility, fast read and write speeds, improved read and write endurance, and low operating voltage. In one embodiment, the processing rates or other activity of circuits nearby an MRAM cell subject to write operations can be increased to increase the temperature of the MRAM cell. The increased temperature lowers the write field required during a write operation, which in turn lowers the power requirement and the switching time of the MRAM cell.
Claims20
A system, comprising:
- an MRAM structure, comprising a plurality of MRAM cells;
- a plurality of circuit elements, each configured to process one or more computing tasks at a processing rate;
- a controller configured to:
- determine MRAM cells subject to upcoming write operations;
- determine one or more circuit elements, in the plurality of circuit elements and within a volume of thermal effect relative to the MRAM cells subject to write operations;
- and
- increase processing rate of the one or more circuit elements within the volume of thermal effect.
A method comprising:
- determining MRAM cells subject to upcoming write operations;
- determining a volume of thermal effect relative to the MRAM cells subject to write operations;
- determining one or more circuit elements within the volume of thermal effect;
- and
- increasing processing rate of the one or more circuit elements within the volume of thermal effect.
Dependencies are inferred from the claim text.