Memory device
AssigneeIucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
InventorsJea Gun Park, Du Yeong Lee, Seung Eun Lee
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Abstract
The present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. In addition, the present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein the seed layer is formed of a material that allows the synthetic antiferromagnetic layers to grow in the FCC (111) direction.
Claims12
A memory device, comprising:
- a substrate;
- and
- a lower electrode, seed layer, synthetic antiferromagnetic layer, separation layer, magnetic tunnel junction, capping layer, and upper electrode laminated on the substrate,
- wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer,
- wherein the diffusion barrier serves to prevent a material forming the capping layer from diffusing from the capping layer into the magnetic tunnel junction.
A memory device, comprising:
- a substrate;
- and
- a lower electrode, seed layer, synthetic antiferromagnetic layer, separation layer, magnetic tunnel junction, and upper electrode laminated on the substrate,
- wherein the magnetic tunnel junction comprises a free layer forming a double layer;
- an oxide layer, a diffusion barrier, and a capping layer are laminated between the magnetic tunnel junction and the upper electrode;
- and
- the diffusion barrier serves to prevent a material forming the capping layer from diffusing from the capping layer into the oxide layer.
Dependencies are inferred from the claim text.