Pattern forming method, resist pattern, method for manufacturing electronic device, and composition for forming upper layer film

A composition for forming an upper layer film,

• wherein the composition for forming an upper layer film contains a resin having a C log P(Poly) of 4.0 or more and at least one compound selected from the group consisting of (A1), (A2), (A3), and (A4),
• wherein (A1) is a basic compound or a base generator,
• (A2) is a compound selected from the group consisting of a compound containing an ether bond, a compound containing a thioether bond, a compound containing a hydroxyl group, a compound containing a thiol group, a compound containing a carbonyl bond, and a compound containing an ester bond,
• (A3) is an ionic compound, and
• (A4) is a compound having a radical trapping group.

A pattern forming method comprising:

• (a) a step of forming a resist film on a substrate;
• (b) a step of applying a composition for forming an upper layer film onto the resist film to form an upper layer film;
• (c) a step of exposing the resist film;
• and
• (d) a step of developing the exposed resist film with a developer including an organic solvent,
• wherein the composition for forming an upper layer film contains a resin having a C log P(Poly) of 3.0 or more and at least one compound selected from the group consisting of (A2), (A3), and (A4),
• wherein (A2) is a compound selected from the group consisting of a compound represented by formula (A-2-1), a compound represented by formula (A-2-2), a compound represented by formula (A-2-3), a compound represented by formula (A-2-4), a compound represented by formula (A-2-5), a compound represented by formula (A-2-6), a compound represented by formula (A-2-7), and a compound represented by formula (A-2-8),
• A-2
• (A3) is an ionic compound selected from the group consisting of a compound represented by formula (A-3-1), a compound represented by formula (A-3-2), and a compound represented by formula (A-3-3), and
• A-3
• (A4) is a compound having a radical trapping group.

A pattern forming method comprising:

• (a) a step of forming a resist film on a substrate;
• (b) a step of applying a composition for forming an upper layer film onto the resist film to form an upper layer film;
• (c) a step of exposing the resist film;
• and
• (d) a step of developing the exposed resist film with a developer including an organic solvent,
• wherein the composition for forming an upper layer film contains a resin having a ClogP(Poly) of 3.0 or more, at least one compound represented by (A4), and optionally at least one compound selected from the group consisting of (A1), (A2), and (A3),
• wherein (A1) is a basic compound or a base generator,
• (A2) is a compound selected from the group consisting of a compound containing an ether bond, a compound containing a thioether bond, a compound containing a hydroxyl group, a compound containing a thiol group, a compound containing a carbonyl bond, and a compound containing an ester bond,
• (A3) is an ionic compound, and
• (A4) is a compound having a radical trapping group.

A composition for forming an upper layer film,

• wherein the composition for forming an upper layer film contains a resin having a C log P(Poly) of 3.0 or more and at least one compound selected from the group consisting of (A2), (A3), and (A4),
• wherein (A2) is a compound selected from the group consisting of a compound represented by formula (A-2-1), a compound represented by formula (A-2-2), a compound represented by formula (A-2-3), a compound represented by formula (A-2-4), a compound represented by formula (A-2-5), a compound represented by formula (A-2-6), a compound represented by formula (A-2-7), and a compound represented by formula (A-2-8),
• A-2
• (A3) is an ionic compound selected from the group consisting of a compound represented by formula (A-3-1), a compound represented by formula (A-3-2), and a compound represented by formula (A-3-3), and
• A-3
• (A4) is a compound having a radical trapping group.

A composition for forming an upper layer film,

• wherein the composition for forming an upper layer film contains a resin having a C log P(Poly) of 3.0 or more, at least one compound represented by (A4), and optionally at least one compound selected from the group consisting of (A1), (A2), and (A3),
• wherein (A1) is a basic compound or a base generator,
• (A2) is a compound selected from the group consisting of a compound containing an ether bond, a compound containing a thioether bond, a compound containing a hydroxyl group, a compound containing a thiol group, a compound containing a carbonyl bond, and a compound containing an ester bond,
• (A3) is an ionic compound, and
• (A4) is a compound having a radical trapping group.