Electrooptical device and electronic apparatus
AssigneeSeiko Epson Corporation
InventorYohei Sugimoto
Life of this patent
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Abstract
A liquid crystal device as an electrooptical device includes a TFT as a transistor, a pixel electrode provided correspondingly to the TFT, a storage capacitor in which a first capacitance electrode, a capacitance insulating layer, and a second capacitance electrode are stacked in order, and a contact portion as a first contact portion configured to electrically connect a semiconductor layer of the TFT and the pixel electrode. In the liquid crystal device, the second capacitance electrode includes a first conductive layer and a second conductive layer stacked on the first conductive layer, and the contact portion is configured of the second conductive layer and is provided so as to be in contact with a drain region of the semiconductor layer.
Claims14
An electrooptical device, comprising:
- a transistor;
- a pixel electrode provided correspondingly to the transistor;
- a storage capacitor in which a first capacitance electrode, a capacitance insulating layer, and a second capacitance electrode are stacked in order, the second capacitance electrode including a first conductive layer and a second conductive layer stacked on the first conductive layer;
- an interlayer insulating layer provided in a layer between the transistor and the storage capacitor, the interlayer insulating layer including a through hole;
- a sidewall provided in a layer between the interlayer insulating layer and the pixel electrode and surrounding the through hole of the interlayer insulating layer in a plan view, the sidewall including a first layer provided in a same layer as the capacitance insulating layer and second layer provided in a same layer as the first conductive layer of the second capacitance electrode;
- and
- a first contact portion provided at an inside of the sidewall and at an inside of the through hole of the interlayer insulating layer such that the first contact portion electrically connects a semiconductor layer of the transistor and the pixel electrode, wherein
- the first contact portion includes a layer provided in a same layer as the second conductive layer of the second capacitance electrode and is provided so as to be in contact with the semiconductor layer.
An electrooptical device, comprising:
- a transistor;
- a pixel electrode provided correspondingly to the transistor;
- a storage capacitor in which a first capacitance electrode, a first capacitance insulating layer, a second capacitance electrode, a second capacitance insulating layer, and a third capacitance electrode are stacked in order;
- a fourth contact portion configured to electrically connect a semiconductor layer of the transistor and the second capacitance electrode;
- and
- a fifth contact portion configured to electrically connect the fourth contact portion and the pixel electrode, wherein
- the second capacitance electrode includes a third conductive layer and a fourth conductive layer stacked on the third conductive layer,
- the third capacitance electrode includes a fifth conductive layer and a sixth conductive layer stacked on the fifth conductive layer,
- the fourth contact portion is configured of the fourth conductive layer and is provided so as to be in contact with the semiconductor layer, and
- the fifth contact portion is configured of the sixth conductive layer and is provided so as to be electrically connected with the second capacitance electrode.
Dependencies are inferred from the claim text.