Inductive testing probe apparatus for testing semiconductor die and related systems and methods

A testing probe system for testing die of a wafer, the testing probe system comprising:

• a first probe interface for positioning on a first side of at least one die of the wafer comprising 3D Interconnect structures, the first probe interface comprising:
• a voltage source;
• and
• at least one first inductor operably coupled to the voltage source;
• and a carrier for supporting the wafer on an opposing side thereof from the first probe interface;
• and a second probe interface on an opposing side of the carrier from the first probe interface a voltage sensor;
• and
• at least one second inductor operably coupled to the voltage sensor, wherein the voltage source of the first probe interface is configured to inductively cause a voltage within at least one 3D Interconnect structure of the die via the at least one first inductor, and wherein the voltage sensor of the carrier is configured to detect a voltage within the at least one 3D Interconnect structure via the at least one second inductor.

A method of testing at least one die, the method comprising:

• positioning a first probe interface proximate at least one 3D Interconnect structure on a first side of the at least one die without physically contacting the at least one 3D Interconnect structure;
• positioning a second probe interface proximate the at least one 3D Interconnect structure on a second, opposing side of the at least one die without physically contacting the at least one 3D Interconnect structure;
• generating an electromagnetic field within at least a first inductor of the first probe interface proximate the at least one 3D Interconnect structure;
• initiating a voltage within the at least one 3D Interconnect structure responsive to the electromagnetic field;
• sensing a voltage across the at least one 3D Interconnect structure with at least a second inductor of the second probe interface;
• and
• determining whether the at least one 3D Interconnect structure includes one or more defects based at least in part on the sensed voltage.