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US 10,852,271 B2Granted
On-chip heater
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTung-Tsun Chen, Jui-Cheng Huang, Kun-Lung Chen, Cheng-Hsiang Hsieh
Life of this patent
Estimating the term…
Abstract
An on-chip heater in a concentric rings configuration having non-uniform spacing between heating elements provides improved radial temperature uniformity and low power consumption compared to circular or square heating elements. On-chip heaters are suitable for integration and use with on-chip sensors that require tight temperature control.
Claims20
An integrated circuit, comprising:
- a channel region having a first surface and a second surface opposite to the first surface;
- a first gate dielectric disposed on the first surface;
- a gate electrode disposed on the first gate dielectric;
- a first source/drain and a second source/drain disposed in an active region and laterally separated from each other by the channel region;
- a second gate dielectric disposed on the second surface;
- a dielectric layer disposed on the gate electrode;
- a heater having a plurality of heating elements arranged concentrically with respect to each other and positioned within the dielectric layer;
- and
- a temperature sensor disposed within the active region,
- wherein each heating element of the plurality of heating elements has an arc shape,
- wherein a first distance between a first pair of adjacent inner heating elements of the plurality of heating elements is greater than a second distance between a second pair of adjacent outer heating elements of the plurality of heating elements, and
- wherein the first pair of adjacent inner heating elements is separated from the second pair of adjacent outer heating elements by a third distance that is smaller than the first distance and greater than the second distance.
9 more elements
An integrated circuit, comprising:
- a dual-gate back side sensing field effect transistor (DG-BSS FET) comprising:
- a first source/drain (S/D) and a second S/D disposed in an active region and laterally separated from each other by a channel region,
- a first gate dielectric disposed on a first surface of the channel region,
- a gate electrode disposed on the first gate dielectric, and
- a second gate dielectric disposed on a second surface of the channel region, the first and second surfaces positioned on opposing sides of the channel region;
- a reaction-site well disposed on the second surface of the channel region;
- a heater comprising a plurality of heating elements with radii different from each other and arranged concentrically with respect to each other,
- wherein the heater is positioned under the reaction-site well to heat a chemical in the reaction-site well,
- wherein a first distance between a first pair of adjacent inner heating elements of the plurality of heating elements is greater than a second distance between a second pair of adjacent outer heating elements of the plurality of heating elements, and
- wherein the first pair of adjacent inner heating elements is separated from the second pair of adjacent outer heating elements by a third distance that is smaller than the first distance and greater than the second distance;
- and
- a temperature sensor in thermal communication with the DG-BSS FET.
9 more elements
An integrated circuit, comprising:
- a semiconductor device comprising:
- a source region and a drain region in an active region and laterally separated from each other by a channel region,
- a first gate dielectric disposed on a first surface of the channel region, and
- a second gate dielectric disposed on a second surface of the channel region opposite to the first surface;
- a dielectric layer disposed on the semiconductor device;
- and
- a heater having circular shaped heating elements arranged in concentric rings and disposed within the dielectric layer, wherein a first distance between a first pair of adjacent inner circular shaped heating elements is greater than a second distance between a second pair of adjacent outer circular shaped heating elements and wherein the first pair of adjacent inner heating elements is separated from the second pair of adjacent outer heating elements by a third distance that is smaller than the first distance and greater than the second distance.
4 more elements
Dependencies are inferred from the claim text.