Facet region detecting method and detecting apparatus
AssigneeDisco Corporation
InventorsNaoki Murazawa, Kunimitsu Takahashi
Life of this patent
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Abstract
A facet region detecting method for detecting a facet region of an SiC single crystal ingot includes: an irradiation step of irradiating a first surface of the SiC single crystal ingot with light; a fluorescence intensity detection step of detecting the intensity of fluorescence generated from the first surface of the SiC single crystal ingot by the light; and a determination step of determining a region of the first surface where the fluorescence intensity is comparatively low as a facet region and determining a region where the fluorescence intensity is comparatively high as a non-facet region.
Claims8
A facet region detecting method for detecting a facet region of a silicon carbide (SIC) single crystal ingot which has a first surface and a second surface on a side opposite to the first surface and in which a c-axis extends from the first surface to the second surface, the facet region detecting method comprising:
- an irradiation step of irradiating the first surface of the SiC single crystal ingot with light from a light source;
- a fluorescence intensity detecting step of detecting fluorescence generated from the first surface of the SiC single crystal ingot by the light irradiating the first surface therewith, to obtain a distribution of fluorescence intensity;
- and
- a determination step of determining a region of the first surface where the fluorescence intensity detected in the fluorescence intensity detecting step is comparatively low as a facet region, and determining a region where the fluorescence intensity is comparatively high as a non-facet region.
A facet region detecting apparatus for detecting a facet region of a silicon carbide (SIC) single crystal ingot which has a first surface and a second surface on a side opposite to the first surface and in which a c-axis extends from the first surface to the second surface, the facet region detecting apparatus comprising:
- a chuck table that holds the SiC single crystal ingot, with the first surface directed to an upper side;
- a light source that irradiates the SiC single crystal ingot held by the chuck table with light;
- a fluorescence detection unit includes an imaging unit that images the first surface of the SiC single crystal ingot generating fluorescence by irradiation with the light from the light source to detect fluorescence generated from the first surface by the light with which the first surface is irradiated from the light source, to obtain a distribution of fluorescence intensity;
- and
- a control unit including a determination unit that detects a position of a facet region of the first surface of the SiC single crystal ingot from the fluorescence intensity distribution detected by the fluorescence detection unit.
Dependencies are inferred from the claim text.