US 10,851,457 B2 · PECVD deposition system for deposition on selective side of the substrate

Abstract

A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition. The showerhead provides a purge gas during the backside deposition.

Claims13

Dependent claims

A plasma processing system, comprising,

a chamber;
a controller;
a showerhead disposed in the chamber;
a first gas manifold connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller;
a shower-pedestal disposed in the chamber and oriented opposite the showerhead;
a second gas manifold connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller;
substrate support is provided by a carrier ring that sits over spacers, the carrier ring is for holding a substrate at a spaced apart relationship from the shower-pedestal and at a separation that is less than 5 mm from the showerhead, the spacers include support surfaces for mating with support extensions on a lower surface of the carrier ring, wherein the spacers sit over an outer periphery of the shower-pedestal;
and
a radio frequency (RF) power supply for providing power to the showerhead to generate a plasma from the second gas that is a reactant gas used for depositing a film on a back-side of the substrate, when present in the chamber and held by the substrate support in the spaced apart relationship from the shower-pedestal.

6 more elements

A plasma processing system, comprising,

a four stations arranged around a rotation mechanism, each of the four stations including,
a chamber;
a controller;
a showerhead disposed in the chamber;
a first gas manifold connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller;
a shower-pedestal disposed in the chamber and oriented opposite the showerhead;
a second gas manifold connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller;
a support is provided by spider forks or paddles connected to a side of the rotation mechanism, the spider forks or paddles configured for holding a carrier ring, the carrier ring supporting a substrate at a spaced apart relationship from the shower-pedestal and at a separation that is less than 5 mm from the showerhead, rotation mechanism is configured to move the spider forks or paddles with the carrier ring to said separation;
and
a radio frequency (RF) power supply for providing power to the showerhead to generate a plasma from the second gas that is a reactant gas used for depositing a film on a back-side of the substrate, when present in the chamber and held by the substrate support in the spaced apart relationship from the shower-pedestal.

7 more elements

Dependencies are inferred from the claim text.

PECVD deposition system for deposition on selective side of the substrate

Life of this patent

PECVD deposition system for deposition on selective side of the substrate

Life of this patent

Abstract

Claims13