Metal deposition methods
AssigneeApplied Materials, Inc.
InventorsYong Wu, Srinivas Gandikota, Abhijit Basu Mallick
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Abstract
A method of forming conformal amorphous metal films is disclosed. A method of forming crystalline metal films with a predetermined orientation is also disclosed. An amorphous nucleation layer is formed on a substrate surface. An amorphous metal layer is formed from the nucleation layer by atomic substitution. A crystalline metal layer is deposited on the amorphous metal layer by atomic layer deposition.
Claims20
A method of forming an amorphous metal layer, the method comprising:
- exposing a substrate surface of a substrate material to a nucleation precursor to form a conformal amorphous nucleation layer;
- and
- converting the conformal amorphous nucleation layer to a conformal amorphous metal layer by substituting atoms of the conformal amorphous nucleation layer with metal atoms from a metal precursor.
A method of forming a 110-oriented tungsten film, the method comprising:
- exposing a surface of an amorphous substrate material to a nucleation precursor to form an amorphous nucleation layer;
- converting the amorphous nucleation layer to an amorphous tungsten layer by substituting atoms of the amorphous nucleation layer with tungsten atoms from a first tungsten precursor;
- and
- separately exposing the amorphous tungsten layer to a second tungsten precursor and a reactant to form a 110-oriented tungsten film.
A method of forming a randomly oriented tungsten film, the method comprising:
- exposing a surface of a crystalline substrate material to a nucleation precursor to form an amorphous nucleation layer;
- converting the amorphous nucleation layer to an amorphous tungsten layer by substituting atoms of the amorphous nucleation layer with tungsten atoms from a first tungsten precursor;
- and
- separately exposing the amorphous tungsten layer to a second tungsten precursor and a reactant to form a randomly oriented tungsten film.
Dependencies are inferred from the claim text.