Method of forming nanocrystalline graphene, and device including nanocrystalline graphene
AssigneeSamsung Electronics Co., Ltd.
InventorsAlum Jung, Keunwook Shin, Kyung-Eun Byun, Hyeonjin Shin, Hyunseok Lim, Seunggeol Nam, Hyunjae Song, Yeonchoo Cho
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Abstract
A method of forming nanocrystalline graphene by a plasma-enhanced chemical vapor deposition process is provided. The method of forming nanocrystalline graphene includes arranging a protective layer on a substrate and growing nanocrystalline graphene directly on the protective layer by using a plasma of a reaction gas. The reaction gas may include a mixed gas of a carbon source gas, an inert gas, and hydrogen gas.
Claims18
A method of forming nanocrystalline graphene, the method comprising:
- arranging a substrate in a reaction chamber;
- forming a protective layer on the substrate;
- injecting into the reaction chamber a reaction gas that includes a mixture of a carbon source gas, an inert gas, and hydrogen gas;
- generating a plasma of the reaction gas in the reaction chamber;
- and
- growing a nanocrystalline graphene directly on a surface of the protective layer using the plasma of the reaction gas at a temperature of 700° C. or lower, wherein
- the protective layer includes one selected from a self-assembled monolayer, graphene quantum dots (GQDs), boron nitride (h-BN), and MX2, wherein
- M is a transition metal and X is a chalcogen element of a transition metal dichalcogenide monolayer (TMDC), and
- the self-assembled monolayer includes one of an amorphous carbon layer, hexamethyldisilazane (HMDS), chlorotrimethylsilane (TMCS), or trichloromethylsilane (TCMS).
A device including nanocrystalline graphene, the device comprising:
- a substrate;
- a protective layer on the substrate;
- and
- a nanocrystalline graphene on the protective layer, the nanocrystalline graphene including crystals having a size in a range from 0.5 nm to about 70 nm, wherein
- the protective layer includes one selected from a self-assembled monolayer, graphene quantum dots (GQDs), boron nitride (h-BN), and MX2,
- M is a transition metal and X is a chalcogen element of a transition metal dichalcogenide monolayer (TMDC), and
- the self-assembled monolayer includes one of an amorphous carbon layer, hexamethyldisilazane (HMDS), chlorotrimethylsilane (TMCS), or trichloromethylsilane (TCMS).
A device including nanocrystalline graphene, the device comprising:
- a substrate;
- a protective layer on the substrate, the protective layer being on only a part of an upper surface of the substrate;
- a nanocrystalline graphene on the protective layer;
- and
- a second nanocrystalline graphene on the upper surface of the substrate, wherein
- the nanocrystalline graphene on the protective layer is a first nanocrystalline graphene on an upper surface of the protective layer, and
- a thickness of first nanocrystalline graphene is different from a thickness of the second nanocrystalline graphene.
Dependencies are inferred from the claim text.