Semiconductor integrated circuit device
AssigneeSocionext Inc.
InventorsToshio Hino, Junji Iwahori
Life of this patent
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Abstract
The present disclosure attempts to provide a capacitor cell having a large capacitance value per unit area in a semiconductor integrated circuit device using a three-dimensional transistor device. A logic cell includes a three-dimensional transistor device. A capacitor cell includes a three-dimensional transistor device. A length of a portion, of a local interconnect, which protrudes from a three-dimensional diffusion layer in a direction away from a power supply interconnect in the capacitor cell is greater than a length of a portion, of a local interconnect, which protrudes from a three-dimensional diffusion layer in a direction away from a power supply interconnect in the logic cell.
Claims4
A semiconductor integrated circuit device comprising:
- a standard cell which is a capacitor cell, wherein
- the standard cell includes:
- a first power supply interconnect extending in a first direction and supplying a first power supply voltage;
- a second power supply interconnect extending in the first direction and supplying a second power supply voltage;
- a capacitor provided between the first power supply interconnect and the second power supply interconnect, and including a three-dimensional transistor device;
- a first interconnect supplying the second power supply voltage to the capacitor;
- and
- a second interconnect supplying the first power supply voltage to the capacitor,
- the first and second power supply interconnects and the first and second interconnects are provided in a same metal interconnect layer,
- the first interconnect includes:
- a first portion extending in the first direction and adjacent to the first power supply interconnect, the first portion being an interconnect closest to the first power supply interconnect in the same metal interconnect layer;
- a second portion extending in the first direction and adjacent to the second power supply interconnect, the second portion being an interconnect closest to the second power supply interconnect in the same metal interconnect layer;
- and
- a third portion extending in a second direction perpendicular to the first direction and connecting the first portion and the second portion together.
Dependencies are inferred from the claim text.