Bonding wire for semiconductor device
AssigneesNippon Steel Chemical & Material Co., Ltd., Nippon Micrometal Corporation
InventorsTetsuya Oyamada, Tomohiro Uno, Daizo Oda, Takashi Yamada
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Abstract
The present invention provides a bonding wire capable of simultaneously satisfying ball bonding reliability and wedge bondability required of bonding wires for memories, the bonding wire including a core material containing one or more of Ga, In, and Sn for a total of 0.1 to 3.0 at % with a balance being made up of Ag and incidental impurities; and a coating layer formed over a surface of the core material, containing one or more of Pd and Pt, or Ag and one or more of Pd and Pt, with a balance being made up of incidental impurities, wherein the coating layer is 0.005 to 0.070 μm in thickness.
Claims12
A bonding wire for a semiconductor device comprising:
- a core material containing one or more of Ga, In, and Sn for a total of 0.1 to 3.0 at%, and a balance being made up of Ag and incidental impurities;
- and
- a coating layer formed over a surface of the core material, containing one or more of Pd and Pt, or Ag and one or more of Pd and Pt, and a balance being made up of incidental impurities, wherein
- the coating layer is 0.005 to 0.070 μm in thickness.
A bonding wire for a semiconductor device comprising:
- a core material containing one or more of Ga, In, and Sn for a total of 0.1 to 3.0 at%, and a balance being made up of Ag and incidental impurities;
- a coating layer formed over a surface of the core material, containing one or more of Pd and Pt, or Ag and one or more of Pd and Pt, and a balance being made up of incidental impurities;
- and
- a Au-containing region containing 15 to 50 at.% Au and provided on an outermost surface of the coating layer;
- wherein
- the coating layer is 0.005 to 0.070 μm in thickness, and
- a thickness of the Au-containing region is 0.001 to 0.050 μm.
Dependencies are inferred from the claim text.