Chemical mechanical polishing for hybrid bonding

A component comprising:

• a first substrate comprising at least a first planar dielectric layer, the first planar dielectric layer including a first arrangement of first conductive structures having a first pitch and a second arrangement of second conductive structures having a second pitch different from the first pitch, the first and second arrangements being on a same side of the first substrate;
• and
• a second substrate directly hybrid bonded to the first substrate, the second substrate comprising at least a second planar dielectric layer directly bonded to the first dielectric layer, the second planar dielectric layer including a third arrangement of third conductive structures and a fourth arrangement of fourth conductive structures, the third and fourth arrangements being on a same side of the second substrate, at least one of the third conductive structures on the second substrate directly bonded to at least one of the first conductive structures on the first substrate and at least one of the fourth conductive structures on the second substrate directly bonded to at least one of the second conductive structures on the first substrate.

A component comprising:

• a first substrate comprising at least a first planar dielectric layer, the first planar dielectric layer including a first arrangement of first conductive structures and a second arrangement of second conductive structures, wherein at least one of the first conductive structures in the first arrangement has a width that is different than a width of at least one of the second conductive structures in the second arrangement, the first and second arrangements being on a same side of the first substrate;
• and
• a second substrate directly hybrid bonded to the first substrate, the second substrate comprising at least a second planar dielectric layer directly bonded to the first dielectric layer, the second planar dielectric layer including a third arrangement of third conductive structures and a fourth arrangement of fourth conductive structures, the third and fourth arrangements being on a same side of the second substrate, at least one of the third conductive structures on the second substrate directly bonded to at least one of the first conductive structures on the first substrate and at least one of the fourth conductive structures on the second substrate directly bonded to at least one of the second conductive structures on the first substrate.