Integrated and distributed over temperature protection for power management switches
AssigneeAnalog Devices International Unlimited Company
InventorsChiong Yew Lai, Javier A. Salcedo
Life of this patent
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Abstract
A plurality of lower voltage metal oxide semiconductor sensors are integrated and distributed in various parts of a power MOSFET to provide over temperature protection. The sensors are sensitive to temperatures of the various parts of the power MOSFET and configured to regulate the power MOSFET when a trip temperature is reached by reducing the operation of the MOSFET. A bias network is configured to set the trip temperature. In some configurations, a threshold voltage is used to monitor and control the maximum temperature.
Claims21
A power delivery system with built-in, distributed over temperature detection, the power delivery system comprising:
- a power metal oxide semiconductor field effect transistor (MOSFET) on a semiconductor substrate and configured to deliver power from a power source;
- and
- a plurality of metal oxide semiconductor (MOS) sensors distributed within an area of the semiconductor substrate outlined by the power MOSFET, the MOS sensors comprising:
- a first MOS sensor having a threshold voltage configured to change conductivity based on a first temperature of a first local portion of the power MOSFET, wherein a drain of the first MOS sensor is connected to a gate of the power MOSFET and a source of the first MOS sensor is connected to a source of the power MOSFET;
- and
- a second MOS sensor having a second threshold voltage configured to change conductivity based on a second temperature of a second local portion of the power MOSFET.
A switch with distributed over temperature protection for local regions, the switch comprising:
- a power metal oxide semiconductor field effect transistor (MOSFET) on a semiconductor substrate;
- and
- a plurality of n-type metal oxide field effect (nMOS) transistors distributed within an area of the semiconductor substrate outlined by the power MOSFET, wherein each of the nMOS transistors has a drain that is electrically coupled to a gate of the power MOSFET, wherein the nMOS transistors are decoupled and isolated from the power MOSFET by at least one of a doped ring, an insulator ring, or a tub.
A power delivery system with built-in, distributed over temperature detection, the power delivery system comprising:
- a power metal oxide semiconductor field effect transistor (MOSFET) on a semiconductor substrate and configured to deliver power from a power source;
- and
- a plurality of metal oxide semiconductor (MOS) sensors distributed within an area of the semiconductor substrate outlined by the power MOSFET, the MOS sensors comprising:
- a first MOS sensor having a threshold voltage configured to change conductivity based on a first temperature of a first local portion of the power MOSFET, wherein a source of the first MOS sensor is connected to a source of the power MOSFET;
- and
- a second MOS sensor having a second threshold voltage configured to change conductivity based on a second temperature of a second local portion of the power MOSFET;
- and
- a current source configured to provide a current to a drain of the first MOS sensor.
Dependencies are inferred from the claim text.