Acoustic management in integrated circuit using phononic bandgap structure
AssigneeTexas Instruments Incorporated
InventorsDaniel Lee Revier, Benjamin Stassen Cook
Life of this patent
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Abstract
An encapsulated integrated circuit is provided that includes an integrated circuit (IC) die. A phonon device is fabricated on the IC die that is configured to emit or to receive phonons that have a range of ultrasonic frequencies. An encapsulation material encapsulates the IC die. A phononic bandgap structure is included within the encapsulation material that is configured to have a phononic bandgap with a frequency range that includes at least a portion of the range of ultrasonic frequencies. A phononic channel is located in the phononic bandgap structure between the phonon device and a surface of the encapsulated IC.
Claims17
Apparatus comprising:
- an integrated circuit (IC) die including transistor devices and interconnects;
- a phonon device on the IC die, the phonon device configured to emit or to receive phonons having a first frequency range;
- an encapsulation material encapsulating the IC die and the phonon device, the encapsulation material having an outer surface;
- a phononic bandgap (PBG) structure within the encapsulation material, the PBG structure having a phononic bandgap with a second frequency range that includes at least a portion of the first frequency range;
- and
- a bandpass channel through the PBG structure between the phonon device and the outer surface.
A method, comprising:
- attaching a phonon device on an integrated circuit (IC) die, the IC die including transistor devices and interconnects;
- attaching the IC die to a leadframe;
- and
- forming a phononic bandgap (PBG) structure by encapsulating the IC die and the phonon device within an encapsulation material, in which the encapsulation material has an outer surface, and a bandpass channel extends through the PBG structure between the phonon device and the outer surface.
A method, comprising:
- emitting or receiving ultrasonic waves having a first frequency range from or to a phonon device on an integrated circuit (IC) die, the IC die including transistor devices and interconnects;
- conducting the ultrasonic waves through a phononic channel within an encapsulation material that encapsulates the IC die and the phonon device, in which the encapsulation material has an outer surface, and the phononic channel extends between the phonon device and the outer surface;
- and
- confining the ultrasonic waves to the phononic channel by a phononic bandgap (PBG) structure within the encapsulation material, in which the PBG structure has a phononic bandgap with a second frequency range that includes at least a portion of the first frequency range.
Dependencies are inferred from the claim text.