Laser device with a stepped graded index separate confinement heterostructure

A computing device, comprising:

• a processor;
• and
• a communication interface coupled with the processor to provide data communication for the processor, wherein the communication interface includes a transceiver with a laser device to provide the data communication, wherein the laser device includes a substrate area and an active region adjacent to the substrate area, wherein the active region includes a multiple quantum wells (MQW) layer;
• and a separate confinement heterostructure (SCH) layer disposed on the MQW layer, wherein the SCH layer comprises a first portion and a second portion adjacent to the first portion, wherein a composition of the first portion is graded to provide a first conduction band energy increase over a distance from the MQW to a p-side of a laser device junction, and a composition of the second portion is graded to provide a second conduction band energy increase over the distance from the MQW to the p-side of the laser device junction, wherein the first conduction band energy increase over the distance from the MQW to the p-side is greater than the second conduction band energy increase over the distance from the MQW to the p-side, wherein a first gradient of a first curve corresponding to the first conduction band energy increase is greater than a second gradient of a second curve corresponding to the second conduction band energy increase.

An integrated circuit, comprising:

• a laser device to provide data communication, wherein the laser device includes:
• a silicon on insulator (SOI) area;
• and
• an active region adjacent to the SOI area, wherein the active region includes a multiple quantum wells (MQW) layer;
• and a separate confinement heterostructure (SCH) layer disposed on the MQW layer, wherein the SCH layer comprises a first portion and a second portion adjacent to the first portion, wherein a composition of the first portion is graded to provide a first conduction band energy increase, and a composition of the second portion is graded to provide a second conduction band energy increase, wherein a first gradient of a first curve corresponding to the first conduction band energy is greater than a second gradient of a second curve corresponding to the second conduction band energy increase.