Surface-mountable semiconductor laser, arrangement with such a semiconductor laser and operating method for same

A surface-mountable semiconductor laser comprising:

• a semiconductor layer sequence having at least one generation region between a p-side and an n-side, the generation region configured to generate laser radiation;
• at least two contact surfaces for external electrical contacting the p-side and the n-side, wherein the contact surfaces are located on the same side of the semiconductor layer sequence in a common plane so that the semiconductor laser is contactable without bonding wires;
• at least one of a plurality of conductor rails extending from a side with the contact surfaces completely across the semiconductor layer sequence and, viewed in a plan view, adjoining an edge of the semiconductor layer sequence so that the conductor rails are only partly surrounded by a material of the semiconductor layer sequence;
• and
• a plurality of through-connections running at least completely through the generation region coming from the side of the contact surfaces and, viewed in a plan view, lie within the semiconductor layer sequence so that the through-connections are surrounded all around by a material of the semiconductor layer sequence,
• wherein the generation region is configured to be pulse operated with time-wise current densities of at least 30 A/mm2,
• wherein at least one of the through-connections or the conductor rails are arranged in at least two rows when viewed in plan view, and in each case at least one of the rows is located on each side of a longitudinal axis, the longitudinal axis being a resonator axis of the semiconductor laser, wherein each of the rows contains at least one of some of the through-connections and of the conductor rails, and
• wherein the semiconductor laser is an edge emitter.