Through silicon via energy storage devices

A method for forming a semiconductor device structure, the method comprising at least:

• forming a plurality of vias through a backside of a silicon substrate;
• filling the vias with a metal material;
• forming at least one trench through a topside of the silicon substrate providing an energy storage device containment feature, wherein the at least one trench exposes the metal material filled vias;
• and
• forming at least one electrical and ionic insulating layer over the silicon substrate and one or more portions of the at least one trench.

A semiconductor device structure comprising at least:

• a silicon substrate having at least one trench disposed therein, the at least one trench providing an energy storage device containment feature;
• a plurality of vias formed within a base of the trench, wherein each via of the plurality of vias comprises metal material;
• a trench base current collector disposed within the at least one trench and on the plurality of vias in contact with the metal material;
• a backside current collector disposed on a backside of the silicon substrate opposite the at least one trench and in contact with the metal material;
• and
• at least one cathode layer and at least one anode layer disposed within the at least one trench.