Method for fabrication of a CEM device

A correlated electron material (CEM) device, comprising:

• a conductive substrate, a CEM layer and a conductive overlay, wherein the CEM layer to have at least one sidewall having, at least in part, a recess as compared to a sidewall of the conductive substrate and a sidewall of the conductive overlay.

An integrated circuit comprising:

• a correlated electron material (CEM) device comprising a conductive substrate, a CEM layer and a conductive overlay, wherein the CEM device to be provided between an upper metal interconnect in a cover layer and a lower metal interconnect in a substrate, the upper metal interconnect and the conductive overlay to have a trench contact, and wherein the CEM layer to have at least one sidewall having, at least in part, a recess therein as compared to a sidewall of the conductive substrate and a sidewall of the conductive overlay.

An electronic device comprising:

• an integrated circuit to have a correlated electron material (CEM) device comprising a conductive substrate, a CEM layer and a conductive overlay, wherein the CEM device to be provided between an upper metal interconnect in a cover layer and a lower metal interconnect in a substrate, the upper metal interconnect and the conductive overlay to have a trench contact, and wherein the CEM layer to have at least one sidewall having, at least in part, a recess as compared to a sidewall of the conductive substrate and a sidewall of the conductive overlay.