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US 10,833,270 B1Granted
Lateral electrochemical cell with symmetric response for neuromorphic computing
AssigneeInternational Business Machines Corporation
InventorsMatthew W. Copel, Takashi Ando, Ko-Tao Lee, John Rozen
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Abstract
A method of forming a resistive processing unit is provided. The method includes forming a spacer on a substrate. The method further includes forming an intercalation layer segment on opposite sides of the spacer, and replacing a portion of each of the intercalation layer segments with an insulating region. The method further includes replacing the spacer with an electrolyte layer.
Claims14
A method of forming a resistive processing unit, comprising:
- forming a spacer on a substrate;
- forming an intercalation layer segment on opposite sides of the spacer;
- replacing a portion of each of the intercalation layer segments with an insulating region;
- and
- replacing the spacer with an electrolyte layer.
2 more elements
A method of forming a resistive processing unit, comprising:
- forming a plurality of lower conductive lines on an insulating region;
- forming a lower insulating layer over the plurality of lower conductive lines;
- forming a via to each of the plurality of lower conductive lines;
- forming a plurality of spacers on the lower insulating layer, wherein each of the plurality of spacers is offset from one of the vias;
- forming intercalation layer segments on the insulating layer;
- wherein the intercalation layer segments are on opposite sides of each of the plurality of spacers;
- replacing a portion of each intercalation layer segments with an insulating region;
- and
- replacing each of the plurality of spacers with an electrolyte layer.
6 more elements
Dependencies are inferred from the claim text.