3D phase change memory
AssigneeInternational Business Machines Corporation
InventorsWei Wang, Balasubramanian Pranatharthiharan, Injo Ok, Kevin W. Brew
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Abstract
A method is presented for constructing a three-dimensional (3D) stack phase change memory (PCM) device. The method includes forming a plurality of stack layers over a plurality of conductive lines, the plurality of conductive lines formed within trenches of an inter-layer dielectric (ILD), forming isolation trenches extending through the plurality of stack layers, etching the plurality of stack layers to define an opening, filling the opening with at least a phase change material, and constructing vias to the plurality of conductive lines.
Claims20
A method for constructing a three-dimensional (3D) stack phase change memory (PCM) device, the method comprising:
- forming a plurality of stack layers in direct contact with a plurality of conductive lines, the plurality of conductive lines formed within trenches of an inter-layer dielectric (ILD);
- forming isolation trenches extending through the plurality of stack layers;
- etching the plurality of stack layers to define an opening;
- filling the opening with at least a phase change material;
- and
- constructing vias to the plurality of conductive lines.
A method for constructing a cylindrical phase change memory (PCM) structure, the method comprising:
- forming a plurality of stack layers in direct contact with a plurality of conductive lines, the plurality of stack layers including at least thermal insulator layers;
- forming isolation trenches extending through the plurality of stack layers;
- etching the plurality of stack layers to define a cavity;
- and
- filling the cavity with at least a phase change material.
A cylindrical phase change memory (PCM) structure, the structure comprising:
- a plurality of stack layers disposed in direct contact with a plurality of conductive lines, the plurality of conductive lines formed within trenches of an inter-layer dielectric (ILD);
- isolation trenches extending through the plurality of stack layers;
- a phase change material disposed within an opening formed in the plurality of stack layers;
- and
- a top electrode disposed adjacent the phase change material in the opening.
Dependencies are inferred from the claim text.