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US 10,833,268 B2Granted
Resistive memory crossbar array with a multilayer hardmask
AssigneeInternational Business Machines Corporation
InventorsHiroyuki Miyazoe, Takashi Ando, Asit Ray, Seyoung Kim
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Abstract
Devices and/or methods that facilitate forming a resistive memory crossbar array with a multilayer hardmask are provided. In some embodiments, a resistive random access memory (RRAM) can comprise a multilayer hardmask comprising three layers, an interlayer oxide between a first layer of silicon nitride and a second layer of silicon nitride. In other embodiments, an RRAM can comprise a multilayer hardmask comprising two layers, a layer of an oxide on a layer of silicon nitride.
Claims16
A device, comprising:
- a resistive random access memory (RRAM) comprising a multilayer hardmask, wherein the multilayer hardmask comprises an interlayer oxide, and wherein the multilayer hardmask comprises a first layer of silicon nitride and a second layer of silicon nitride, and wherein the interlayer oxide is between the first layer of silicon nitride and the second layer of silicon nitride.
A method, comprising:
- forming a resistive random access memory (RRAM) comprising a multilayer hardmask, wherein the multilayer hardmask comprises an interlayer oxide, and wherein the multilayer hardmask comprises a first layer of silicon nitride and a second layer of silicon nitride, and wherein the interlayer oxide is between the first layer of silicon nitride and the second layer of silicon nitride.
A device, comprising:
- a resistive random access memory (RRAM) comprising a multilayer hardmask, wherein the multilayer hardmask comprises a first layer of an oxide on a first layer of silicon nitride, and wherein the multilayer hardmask comprises a second layer of silicon nitride, and wherein the layer of an oxide is between the first layer of silicon nitride and the second layer of silicon nitride.
Dependencies are inferred from the claim text.