Structure and method to form phase change memory cell with self- align top electrode contact

A memory array comprising a plurality of phase change memory elements, wherein at least one of the plurality of phase change memory elements comprises:

• a bottom element coupled to a landing pad of the at least one of the plurality of phase change memory elements;
• a GeSbTe portion coupled to the bottom element, wherein the GeSbTe portion is fully formed within a via extending from and above the bottom element, and wherein the via is directly coated with a metal liner and extends through a layer of low-k dielectric material and through an NBLOK material;
• a top electrode metal coupled to the GeSbTe portion;
• an NBLOK capping layer extending at least partially over the layer of low-k dielectric material;
• another layer of low-k dielectric material extending at least partially over the NBLOK capping layer;
• and
• a self-aligned metal contact coupled to the top electrode metal and extending through the another layer of low-k dielectric material and through the NBLOK capping layer and penetrating into the top electrode metal.