Resistive memory crossbar array with ruthenium protection layer
AssigneeInternational Business Machines Corporation
InventorsTakashi Ando, Lawrence A. Clevenger, Michael Rizzolo, Chih-Chao Yang
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Abstract
A method is presented for protecting resistive random access memory (RRAM) stacks within a resistive memory crossbar array. The method includes forming a plurality of conductive lines within an interlayer dielectric (ILD), forming a RRAM stack including at least a hardmask having a first layer and a second layer, the second layer being a ruthenium layer, and removing the first layer of dual layer hardmask during a via opening such that the ruthenium layer remains intact to protect the RRAM stack during a damascene process.
Claims16
A method for protecting resistive random access memory (RRAM) stacks within a resistive memory crossbar array, the method comprising:
- forming a plurality of conductive lines within an interlayer dielectric (ILD);
- constructing a dielectric cap layer directly contacting the plurality of conductive lines;
- forming a RRAM stack including at least a hardmask having a first layer and a second layer, the second layer being a ruthenium layer;
- forming spacers adjacent the RRAM stack, the spacers being separate and distinct from the dielectric cap layer;
- and
- removing the first layer of dual layer hardmask during a via opening such that the ruthenium layer remains intact to protect the RRAM stack during a damascene process.
A method for protecting resistive random access memory (RRAM) stacks within a resistive memory crossbar array, the method comprising:
- forming a plurality of conductive lines within an interlayer dielectric (ILD);
- forming a RRAM stack having a bottom electrode, a top electrode, and a bi-layer hardmask including ruthenium;
- forming a low-k dielectric layer over the RRAM stack;
- removing a first layer of the bi-layer hardmask during a via opening;
- and
- removing a second layer of the bilayer hardmask concurrently with a plurality of sacrificial layers formed over the low-k dielectric layer to create a step-like via landing.
Dependencies are inferred from the claim text.