Storage device
AssigneeToshiba Memory Corporation
InventorsDaisuke Ikeno, Akihiro Kajita, Atsuko Sakata
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Abstract
According to one embodiment, a storage device includes a first conductive layer, a second conductive layer, a resistance-variable layer, between the first conductive layer and the second conductive layer, that includes germanium, antimony, and tellurium, a first layer, between the resistance-variable layer and the first conductive layer, that includes carbon, a second layer, between the resistance-variable layer and the second conductive layer, that includes carbon, a third layer, between the resistance-variable layer and the first layer, that includes at least one of tungsten nitride or tungsten carbide, and a fourth layer, between the resistance-variable layer and the second layer, that includes at least one of tungsten nitride or tungsten carbide.
Claims13
A storage device comprising:
- a first conductive layer;
- a second conductive layer;
- a resistance-variable layer, provided between the first conductive layer and the second conductive layer, that includes germanium (Ge), antimony (Sb), and tellurium (Te);
- a first layer, provided between the resistance-variable layer and the first conductive layer, that primarily includes carbon;
- a second layer, provided between the resistance-variable layer and the second conductive layer, that primarily includes carbon;
- a third layer, provided between the resistance-variable layer and the first layer, that includes at least one of tungsten nitride with a nitrogen concentration of 10 atomic percent or more and 25 atomic percent or less and tungsten carbide with a carbon concentration of 4 atomic percent or more and 20 atomic percent or less;
- and
- a fourth layer, provided between the resistance-variable layer and the second layer, that includes at least one of tungsten nitride with a nitrogen concentration of 10 atomic percent or more and 25 atomic percent or less and tungsten carbide with a carbon concentration of 4 atomic percent or more and 20 atomic percent or less.
A storage device comprising:
- a plurality of first wirings;
- a plurality of second wirings intersecting with the plurality of first wirings;
- and
- a plurality of memory cells respectively located at regions where one of the second wirings intersects with one of the first wirings,
- wherein each of the memory cells includes:
- a first conductive layer;
- a second conductive layer;
- a resistance-variable layer, provided between the first conductive layer and the second conductive layer, that includes germanium (Ge), antimony (Sb), and tellurium (Te);
- a first layer, provided between the resistance-variable element and the first conductive layer, that primarily includes carbon;
- a second layer, provided between the resistance-variable element and the second conductive layer, that primarily includes carbon;
- a third layer, provided between the resistance-variable layer and the first layer, that includes at least one of tungsten nitride with a nitrogen concentration of 10 atomic percent or more and 25 atomic percent or less and tungsten carbide with a carbon concentration of 4 atomic percent or more and 20 atomic percent or less;
- and
- a fourth layer, provided between the resistance-variable layer and the second layer, that includes at least one of tungsten nitride with a nitrogen concentration of 10 atomic percent or more and 25 atomic percent or less and tungsten carbide with a carbon concentration of 4 atomic percent or more and 20 atomic percent or less.
Dependencies are inferred from the claim text.