Method for producing a memory cell having a porous dielectric and use of the memory cell

A method for producing a memory cell, the method comprising:

• a) providing a non-conductive substrate;
• b) mounting a first conductor track on the non-conductive substrate;
• c) mounting a porous dielectric with redox-active molecules at an intersection point on the first conductor track such that the porous dielectric contacts a top side of the first conductor track at the intersection point, wherein the porous dielectric is a sol-gel ink or a hydrogel ink that is dried after being mounted on the first conductor track so as to form a nanoporous layer comprising pores having a residual liquid volume that includes the redox-active molecules;
• d) mounting a second conductor track orthogonally to the first conductor track such that the second conductor track contacts a top side of the porous dielectric at the intersection point;
• and
• e) mounting, in a manner such that the first and second conductor tracks remain contactable, a passivation layer on the substrate, the first conductor track, the porous dielectric, and the second conductor track;
• wherein the first conductor track forms a first electrode at the intersection point and the second conductor track forms a second electrode at the intersection point,
• wherein the first conductor track, the porous dielectric, and the second conductor track are configured to form a memory state at the intersection point, and
• wherein the first and second conductor tracks are configured to apply a voltage between the first and second electrodes so as to drive a redox reaction of the redox-active molecules in order to generate the memory state.