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US 10,833,254 B2Granted
Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory
AssigneeQUALCOMM Incorporated
InventorsChando Park, Jimmy Jianan Kan, Peiyuan Wang, Seung Hyuk Kang
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Abstract
A perpendicular magnetic tunnel junction may include a free layer, a reference layer, and a barrier layer. The barrier layer may be arranged between the free layer and the reference layer. The barrier layer may include a first interface and a second interface. The first interface may face the free layer, and a second interface may face the reference layer. The first interface may not physically correlate with the second interface.
Claims5
A method of making a perpendicular magnetic tunnel junction (pMTJ), comprising:
- depositing a barrier layer on a reference layer of the pMTJ;
- treating an exposed surface of the barrier layer, the exposed surface of the barrier layer not physically correlating with an opposing surface of the barrier layer, by:
- roughing the opposing surface of the barrier layer, and
- smoothing the exposed surface of the barrier layer;
- depositing a free layer on the exposed surface of the barrier layer of the pMTJ;
- and
- forming a cap layer on a surface of the free layer opposite the exposed surface of the barrier layer.
4 more elements
Dependencies are inferred from the claim text.