Low magnetic moment materials for spin transfer torque magnetoresistive random access memory devices

A magnetoresistive random access memory device for storing at least one bit of information, the device comprising:

• a reference layer comprised of a magnetic material, the reference layer having a fixed magnetic polarity and formed directly on an electrode;
• an oxide tunnel barrier layer formed directly on the reference layer;
• a non-oxide metal layer formed directly on the tunnel barrier layer, the metal layer being non-programmable and distinct from a non-uniform free layer;
• the non-uniform free layer of a magnetic material having a changeable magnetic polarity formed directly on the metal layer, wherein the metal layer is interposed between the free layer and the tunnel barrier layer, the metal layer selected to reduce formation of free layer islands at thicknesses less than about 10 Å;
• and
• a cap layer formed over the free layer.

A method for forming a magnetoresistive random access memory device for storing at least one bit of information, the method comprising:

• forming an oxide tunnel barrier layer directly on a reference layer, the reference layer comprised of a magnetic material with a fixed magnetic polarity and formed directly on an electrode;
• forming a non-oxide metal layer directly on the tunnel barrier layer, the metal layer being non-programmable and distinct from a non-uniform free layer;
• forming the non-uniform free layer of a magnetic material having a changeable magnetic polarity directly on the metal layer, wherein the metal layer is interposed between the free layer and the tunnel barrier layer, the metal layer selected to reduce formation of free layer islands at thicknesses less than about 10 Å;
• forming a cap layer over the free layer;
• and
• annealing the device structure.