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US 10,833,249 B2Granted
Magnetic memory cell of current programming type
AssigneesCentre National De La Recherche Scientifique, Commissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsGilles Gaudin, Ioan Mihai Miron, Alexandru Trifu
Life of this patent
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Abstract
A memory cell, including a stack of: a conductive layer of a conductive material including a first chemical element; an oxide layer sufficiently thin to allow the flowing of a current by tunnel effect; and a conductive ferromagnetic layer having a programmable magnetization and including a second chemical element, wherein the oxide layer includes the first and second chemical elements.
Claims19
A memory cell, comprising a stack of:
- a conductive track arranged to allow the flowing of a programming current in the plane of the conductive track, said conductive layer comprising a conductive material;
- a conductive layer of a conductive material comprising at least a first chemical element;
- an oxide layer sufficiently thin to allow the flowing of a current by tunnel effect;
- and
- a conductive ferromagnetic layer having a programmable magnetization,
- said conductive ferromagnetic layer comprising at least a second chemical element,
- wherein said oxide layer:
- is arranged between said conductive layer comprising the at least the first chemical element and said conductive ferromagnetic layer comprising the at least the second chemical element,
- is in contact with said conductive layer comprising the at least the first chemical element and said conductive ferromagnetic layer comprising the at least the second chemical element, and
- comprises the at least the first chemical element and the at least the second chemical element, and
- wherein said oxide layer has a ratio of atoms of the at least the first chemical element to atoms of the at least the second chemical element that is greater than approximately 3:7 and less than approximately 7:3.
8 more elements
A memory cell, comprising a stack of:
- a conductive track arranged to allow the flowing of a programming current in the plane of the conductive track, said conductive layer comprising a conductive material and comprising in a portion thereof at least a first chemical element;
- an oxide layer sufficiently thin to allow the flowing of a current by tunnel effect;
- and
- a conductive ferromagnetic layer having a programmable magnetization,
- said conductive ferromagnetic layer comprising at least a second chemical element,
- wherein said oxide layer:
- is arranged between said portion of the conductive track comprising the at least the first chemical element and said conductive ferromagnetic layer comprising the at least the second chemical element,
- is in contact with said portion of the conductive track comprising the at least the first chemical element and said conductive ferromagnetic layer comprising the at least the second chemical element, and
- comprises the at least the first chemical element and the at least the second chemical element, and
- wherein said oxide layer has a ratio of atoms of the at least the first chemical element to atoms of the at least the second chemical element that is greater than approximately 3:7 and less than approximately 7:3.
7 more elements
Dependencies are inferred from the claim text.