Thermalization of cryogenic quantum circuits
AssigneeInternational Business Machines Corporation
InventorsPatryk Gumann, Salvatore Bernardo Olivadese, Jerry M. Chow
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Abstract
In an embodiment, a device includes a substrate having a thickness, wherein the thickness is a function of energy dissipation of a particle. In an embodiment, the device includes a thermal layer, formed on the substrate, of a first material that exhibits at least a threshold level of thermal conductivity, wherein the threshold level of thermal conductivity is achieved at a cryogenic temperature range in which a quantum circuit operates, and wherein any intervening material exhibits at least a second threshold level of thermal conductivity, wherein the threshold level of thermal conductivity is achieved at a cryogenic temperature range in which a quantum circuit operates.
Claims10
A device comprising:
- a substrate having a first thickness, wherein the first thickness is a function of energy dissipation of a particle;
- a first thermal layer, formed on the substrate, of a first material that exhibits a first threshold level of thermal conductivity and has a second thickness less than the first thickness,
- wherein the first threshold level of thermal conductivity is achieved at a cryogenic temperature range in which a quantum circuit operates;
- and
- a second thermal layer, formed on the first thermal layer, of a second material that exhibits a second threshold level of thermal conductivity and has a third thickness greater than the second thickness and less than the first thickness,
- wherein the second threshold level of thermal conductivity is achieved at a cryogenic temperature range in which a quantum circuit operates.
Dependencies are inferred from the claim text.