Optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip

A method of producing an optoelectronic semiconductor chip comprising in the specified sequence:

• A) providing a transparent substrate and growing a semiconductor layer sequence on the substrate, wherein the semiconductor layer sequence has an active layer that generates radiation between a first and a second semiconductor region,
• B) producing a first mask layer on the semiconductor layer sequence and applying a second electrically insulating mirror layer that reflects radiation generated during operation in the active layer in places onto the second semiconductor region,
• C) removing the first mask layer and applying a current spreading layer over a whole area for the second semiconductor region,
• D) producing a second mask layer on the semiconductor layer sequence and etching at least one contact trench extending from a side of the second semiconductor region facing away from the substrate through the active layer into the first semiconductor region,
• E) applying a first electrically insulating mirror layer that reflects radiation generated during operation in the active layer in the contact trench,
• F) removing the second mask layer and producing a third mask layer as well as partially removing the first mirror layer and applying a contact layer to impress current directly into the first semiconductor region,
• G) removing the third mask layer as well as applying a passivation layer, producing a fourth mask layer and applying a metallic current web in the contact trench, wherein the current web is configured for a current conduction along the contact trench and impresses current into the first semiconductor region so that the first mirror layer protrudes out of the contact trench over the active layer and extends onto a side of the second semiconductor region facing away from the substrate.