High light extraction efficiency (LEE) light emitting diode (LED)

A light-emitting diode, comprising;

• a substrate having a first surface and an opposing second surface;
• a reflection layer disposed on the first surface of the substrate;
• a light-emitting diode structure arranged on the second surface of the substrate, the light-emitting diode structure comprising a first semiconducting layer, an active layer, a second semiconducting layer and an overlayer disposed consecutively on the second surface;
• and
• the overlayer having a plurality of protruding asymmetric micro-structured elements each having a curved surface, at least a portion of a surface of each micro-structured element of the overlayer being disposed at an obtuse angle with respect to the second semiconducting layer when measured from within the respective micro-structured element, wherein each protruding micro-structured element of the overlayer is asymmetric with respect to a plane substantially parallel to the second semiconducting layer and to a plane substantially perpendicular to the second semiconducting layer and the overlayer is transparent within an emission wavelength range of the light-emitting diode.

A light-emitting diode, comprising;

• a first semiconducting layer having a first surface and an opposing second surface;
• a first electrode arranged on the first semiconducting layer;
• a light-emitting diode structure arranged on the second surface of the first semiconducting layer, the light-emitting diode structure comprising an active layer, a second semiconducting layer and a second electrode disposed consecutively on the second surface;
• a plurality of protruding asymmetric micro-structured elements defining at least a part of the first surface of the first semiconducting layer, at least a portion of a surface of each micro-structured element being disposed at an obtuse angle with respect to the second surface of the first semiconducting layer when measured from within the respective micro-structured element, wherein each protruding micro-structured element is asymmetric with respect to a plane substantially parallel to the second surface of the first semiconducting layer and to a plane substantially perpendicular to the second surface of the first semiconducting layer;
• and
• a plurality of micro and/or nano structured members disposed on each of the plurality of protruding asymmetric micro-structured elements of the first surface of the first semiconducting layer.