Back to results
US 10,833,218 B2Granted
Semiconductor wafers and semiconductor devices with barrier layer and methods of manufacturing
AssigneeInfineon Technologies AG
InventorsFrancisco Javier Santos Rodriguez, Roland Rupp, Hans-Joachim Schulze
Life of this patent
Estimating the term…
Abstract
A semiconductor ingot is sliced to obtain a semiconductor slice with a front side surface and a rear side surface parallel to the front side surface. A passivation layer is formed directly on at least one of the front side surface and the rear side surface. A barrier layer including least one of silicon carbide, a ternary nitride, and a ternary carbide is formed on the rear side surface.
Claims22
A method of manufacturing semiconductor wafers, the method comprising:
- slicing a semiconductor ingot to obtain a semiconductor slice comprising a semiconductor wafer with a front side surface and a rear side surface parallel to the front side surface;
- forming a passivation layer on at least one of the front side surface and the rear side surface;
- forming a continuous barrier layer from at least one of silicon carbide, a ternary nitride, and a ternary carbide on the rear side surface configured for gettering impurities from outside or inside of the semiconductor slice;
- completely removing the continuous barrier layer;
- rear side processing of the semiconductor wafer, wherein the rear side processing comprises at least one of implanting dopants through a rear side surface of the semiconductor wafer on the rear side, forming a rear side metallization on the rear side surface, or recessing the semiconductor wafer;
- and
- forming a support ring from a remnant portion of the semiconductor wafer by selectively recessing a circular inner section of the semiconductor slice.
4 more elements
A method of manufacturing semiconductor devices, comprising:
- forming semiconductor elements at a front side of a semiconductor wafer that comprises a semiconductor slice and a continuous barrier layer from at least one of silicon carbide, a ternary nitride and a ternary carbide on a back side opposite to the front side configured for gettering impurities from outside or inside of the semiconductor slice;
- forming, at the front side, a front side metallization electrically connected to the semiconductor elements;
- and
- completely removing the continuous barrier layer;
- rear side processing of the semiconductor wafer, wherein the rear side processing comprises at least one of implanting dopants through a rear side surface of the semiconductor wafer on the rear side, forming a rear side metallization on the rear side surface, or recessing the semiconductor wafer;
- and
- forming a support ring from a remnant portion of the semiconductor wafer by selectively recessing a circular inner section of the semiconductor slice.
4 more elements
Dependencies are inferred from the claim text.