Solar cell and method for manufacturing the same
AssigneeLG Electronics Inc.
InventorsHyungjin Kwon, Hyunjung Park, Junghoon Choi, Changseo Park
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Abstract
Discussed is a solar cell including a semiconductor substrate, a tunneling layer formed on one surface of the semiconductor substrate, a first conductive semiconductor layer formed on a surface of the tunneling layer and a second conductive semiconductor layer formed on the surface the tunneling layer. A separation portion separates the first and second conductive semiconductor layers from each other, and is formed on the surface of the tunneling layer at a location corresponding to at least a portion of a boundary between the first and second conductive semiconductor layers.
Claims11
A solar cell comprising:
- a semiconductor substrate including monocrystalline silicon;
- a first conductive semiconductor layer formed of a polycrystalline semiconductor and formed on one surface of the semiconductor substrate;
- a second conductive semiconductor layer formed of a polycrystalline semiconductor and formed on the one surface of the semiconductor substrate;
- a tunneling layer entirely formed on the one surface of the semiconductor substrate between the semiconductor substrate and the first and second conductive semiconductor layers;
- a separation portion to separate the first and second conductive semiconductor layers from each other, and formed on a surface of the tunneling layer at a location corresponding to at least a portion of a boundary between the first and second conductive semiconductor layers;
- a plurality of electrodes contacting with at least the first conductive semiconductor layer and the second conductive semiconductor layer, and including a first electrode and a second electrode;
- and
- an insulation layer formed on the first and second conductive semiconductor layers,
- wherein the separation portion includes a trench in the form of an empty space,
- wherein the trench includes a plurality of first trench portions extending in a first direction, a plurality of second trench portions connecting first ends of the plurality of first trench portions, and a plurality of third trench portions connecting second ends opposite to the first ends of the plurality of first trench portions, and
- wherein a shape of the plurality of second trench portions is semi-circular and a shape of the plurality of third trench portions is a straight line extending in a second direction between two curved portions,
- wherein the separation portion of the empty space has a width less than each of a width of the first conductive semiconductor layer and a width of the second conductive semiconductor layer,
- wherein insulation layer is disposed on both lateral surfaces and a bottom surface of the trench, and portions of the insulation layer disposed on both the lateral surfaces are apart from each other,
- wherein the width of the first conductive semiconductor layer is greater than the width of ti second conductive semiconductor layer,
- wherein a width of each electrode is greater than the width of the separation portion, and
- wherein the width of each electrode is less than the width of the second conductive semiconductor layer.
Dependencies are inferred from the claim text.