Multiple width nanosheet devices
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Lawrence A. Clevenger, Carl Radens, Junli Wang, John H. Zhang
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Abstract
A technique relates to a semiconductor device. A first stack includes a first plurality of nanowires respectively coupled to first source and drain regions, and a second stack includes a second plurality of nanowires respectively coupled to second source and drain regions. First source and drain contacts couple to a first predefined number of the first plurality of nanowires. Second source and drain contacts to couple to a second predefined number of the second plurality of nanowires, wherein the first predefined number is different from the second predefined number.
Claims19
A method of forming a semiconductor device, the method comprising:
- forming a first stack comprising first nanowires coupled to first source and drain regions, and a second stack comprising second nanowires coupled to second source and drain regions;
- and
- forming first contacts with a first depth for coupling to a number of exposed sidewalls of the first source and drain regions and second contacts with a second depth for coupling to another number of exposed sidewalls of the second source and drain regions, the number of exposed sidewalls being different from the another number of exposed sidewalls, the first depth being different from the second depth.
A method of forming a semiconductor device, the method comprising:
- forming a first stack comprising first nanowires coupled to first source and drain regions, and a second stack comprising second nanowires coupled to second source and drain regions;
- and
- forming first contacts with a first depth for coupling to the first nanowires and second contacts with a second depth for coupling to the second nanowires, the first depth being different from the second depth, wherein the first source and drain regions are directly connected to the first contacts.
A semiconductor device comprising:
- a first stack comprising first nanowires coupled to first source and drain regions, and a second stack comprising second nanowires coupled to second source and drain regions;
- and
- first contacts with a first depth for coupling to the first nanowires and second contacts with a second depth for coupling to the second nanowires, the first depth being different from the second depth, wherein the first source and drain regions are directly connected to the first contacts.
Dependencies are inferred from the claim text.