Semiconductor device, method of manufacturing the same and electronic device including the device
AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorHuilong Zhu
Life of this patent
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Abstract
There are provided a semiconductor device, a method of manufacturing the same, and an electronic device including the device. According to an embodiment, the semiconductor device may include a substrate, and a first device and a second device formed on the substrate. Each of the first device and the second device includes a first source/drain layer, a channel layer and a second source/drain layer stacked on the substrate in sequence, and also a gate stack surrounding a periphery of the channel layer. The channel layer of the first device and the channel layer of the second device are substantially co-planar.
Claims44
A semiconductor device, comprising:
- a substrate;
- a first device and a second device formed on the substrate, wherein each of the first device and the second device comprises:
- a first source/drain layer, a channel layer and a second source/drain layer stacked on the substrate in sequence;
- and
- a gate stack surrounding a periphery of the channel layer and self-aligned with the channel layer,
- wherein at least some of materials in the gate stack of the first device is different from that in the gate stack of the second device.
Dependencies are inferred from the claim text.