Substantially defect free relaxed heterogeneous semiconductor fins on bulk substrates

A method of forming a semiconductor structure, the method comprising:

• providing a plurality of first semiconductor fins on a bulk semiconductor substrate, wherein each first semiconductor fin and the bulk semiconductor substrate comprise a first semiconductor material;
• forming a conformal layer of a second semiconductor material that differs from the first semiconductor material on physically exposed surfaces of the first semiconductor fins and the bulk semiconductor substrate;
• forming a first dielectric material on the conformal layer;
• removing an upper portion of the first dielectric material and a portion of the conformal layer that is present on a topmost surface of each first semiconductor fin to provide a first dielectric material portion and a plurality of second semiconductor fins of the second semiconductor material;
• removing an entirety of each first semiconductor fin to physically expose a topmost surface of the bulk semiconductor substrate, wherein the physically exposed topmost surface of the bulk semiconductor substrate is coplanar with a bottommost surface of each second semiconductor fin of the plurality of second semiconductor fins;
• forming a second dielectric material portion directly on the physically exposed topmost surface of the bulk semiconductor substrate, wherein the second dielectric material portion has a topmost surface that is coplanar with a topmost surface of the first dielectric material portion and each second semiconductor fin;
• and
• recessing the first and second dielectric material portions to expose an upper portion of each second semiconductor fin.