Semiconductor device

A semiconductor device comprising:

• an insulated gate structure provided on a first main surface side of a semiconductor substrate, the insulated gate structure being constituted by a 3-layer structure including a metal film, an oxide film, and a semiconductor material;
• a gate pad provided at a first main surface of the semiconductor substrate, via an insulating film;
• a gate finger provided at the first main surface of the semiconductor substrate, via the insulating film, and to which a plurality of gate electrodes constituted by the metal film of the insulated gate structure is electrically connected;
• a gate poly-silicon layer provided at the first main surface of the semiconductor substrate, via the insulating film, the gate poly-silicon layer electrically connecting the gate pad and the gate finger;
• and
• an electrode pad for measuring a first resistance value, the electrode pad being provided at the first main surface of the semiconductor substrate, via the insulating film, and electrically connected to the gate finger, wherein
• all gate electrodes of the plurality of gate electrodes are electrically connected between a first connection part and a second part of the gate finger, the first connection part connecting the gate finger and the gate poly-silicon layer, the second connection part connecting the gate finger and the electrode pad.