Gallium nitride epitaxial structures for power devices
AssigneeQROMIS, Inc.
InventorsVladimir Odnoblyudov, Steve Lester, Ozgur Aktas
Life of this patent
Estimating the term…
Abstract
A method for making a multilayered device on an engineered substrate having a substrate coefficient of thermal expansion includes growing a buffer layer on the engineered substrate, and growing a first epitaxial layer on the buffer layer. The first epitaxial layer is characterized by an epitaxial coefficient of thermal expansion substantially equal to the substrate coefficient of thermal expansion.
Claims18
A method for fabricating a multilayered high electron mobility transistor (HEMT) device on an engineered substrate having a substrate coefficient of thermal expansion, the method comprising:
- providing an engineered substrate, the engineered substrate comprising:
- a polycrystalline substrate;
- a barrier layer encapsulating the polycrystalline substrate;
- a bonding layer coupled to the barrier layer;
- and
- a single crystalline silicon layer coupled to the bonding layer;
- growing a buffer layer on the single crystalline silicon layer;
- growing a first epitaxial layer coupled to the buffer layer, wherein the first epitaxial layer is characterized by an epitaxial coefficient of thermal expansion substantially equal to the substrate coefficient of thermal expansion;
- growing an undoped gallium nitride (GaN) layer coupled to the first epitaxial layer;
- and
- growing a barrier layer coupled to the undoped GaN layer.
A multilayered high electron mobility transistor (HEMT) device formed on an engineered substrate having a substrate coefficient of thermal expansion, the multilayer HEMT comprising:
- an engineered substrate comprising:
- a polycrystalline substrate;
- a barrier layer encapsulating the polycrystalline substrate;
- a bonding layer coupled to the barrier layer;
- and
- a single crystalline silicon layer coupled to the bonding layer;
- a buffer layer coupled to the single crystalline silicon layer;
- a first epitaxial layer coupled to the buffer layer, wherein the first epitaxial layer is characterized by an epitaxial coefficient of thermal expansion substantially equal to the substrate coefficient of thermal expansion;
- an undoped gallium nitride (GaN) layer coupled to the first epitaxial layer;
- and
- a barrier layer coupled to the undoped GaN layer.
Dependencies are inferred from the claim text.