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US 10,833,183 B2Granted
Interlayer ballistic transport semiconductor devices
AssigneeGlobalfoundries Inc.
InventorsJoshua Dillon, Siva P. Adusumilli, Jagar Singh, Anthony Stamper, Laura Schutz
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Abstract
One device disclosed herein includes, among other things, first and second conductive features embedded in a first dielectric layer, a cap layer positioned above the first dielectric layer, a ballistic transport material contacting the first conductive member and positioned above a portion of the first dielectric layer, and first and second contacts contacting the first and second conductive features.
Claims19
A device, comprising:
- a first conductive feature and a second conductive feature positioned in a first dielectric layer positioned above a substrate;
- a cap layer positioned above the first dielectric layer;
- a ballistic transport material positioned above a portion of the first dielectric layer positioned between the first conductive feature and the second conductive feature;
- and
- a first contact contacting the first conductive feature and a second contact contacting the second conductive feature, wherein the first contact and the second contact extend from a back side of the substrate, wherein at least a portion of the first and second contacts are positioned in the first dielectric layer.
2 more elements
A device, comprising:
- a first conductive feature and a second conductive feature positioned in a first dielectric layer;
- a cap layer positioned above the first dielectric layer;
- a barrier layer positioned on portions of the first conductive feature and the second conductive feature;
- a ballistic transport material contacting a first portion of the barrier layer positioned on the first conductive feature and a second portion of the barrier layer positioned on the second conductive feature and positioned above a portion of the first dielectric layer positioned between the first conductive feature and the second conductive feature;
- and
- a first contact contacting the first conductive feature and a second contact contacting the second conductive feature.
3 more elements
A device, comprising:
- first and second conductive features positioned in a first dielectric layer;
- a cap layer positioned above the first dielectric layer;
- a barrier layer positioned on portions of the first and second conductive features;
- a ballistic transport material contacting the barrier layer on the first and second conductive features and positioned above a portion of the first dielectric layer positioned between the first conductive feature and the second conductive feature;
- a conductive gate electrode positioned above at least a portion of the ballistic transport material;
- a gate insulation layer positioned between the ballistic transport material and the conductive gate electrode;
- a first contact contacting the first conductive feature and a second contact contacting the second conductive feature;
- and
- a third contact contacting the gate structure.
6 more elements
Dependencies are inferred from the claim text.