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US 10,833,176 B2Granted
Selectively formed gate sidewall spacer
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Xin Miao, Wenyu Xu, Chen Zhang
Life of this patent
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Abstract
A method for forming a semiconductor device comprises forming a fin on a substrate and forming a sacrificial gate over a channel region of the fin. A hydrogen terminated surface is formed on sidewalls of the sacrificial gate, and a spacer is deposited on the hydrogen terminated surface of the sacrificial gate. An insulator layer is formed over portions of the fin. The sacrificial gate is removed to expose the channel region of the fin, and a gate stack is formed over the channel region of the fin.
Claims8
A semiconductor device comprising:
- a semiconductor fin arranged on a substrate;
- an oxide layer arranged on the semiconductor fin;
- a gate stack arranged over a channel region of the semiconductor fin;
- a spacer arranged adjacent to the gate stack on the oxide layer, wherein the spacer is also arranged adjacent to a hydrogen terminated surface;
- and
- a source/drain region arranged adjacent to the spacer.
3 more elements
Dependencies are inferred from the claim text.