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US 10,833,175 B2Granted
Formation of dislocation-free SiGe finFET using porous silicon
AssigneeInternational Business Machines Corporation
InventorsStephen W. Bedell, Kangguo Cheng, Jeehwan Kim, Alexander Reznicek, Devendra K. Sadana
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Abstract
A semiconductor device that includes a fin structure having a porous core, and a relaxed semiconductor layer present on the porous core. The semiconductor device may further include a strained semiconductor layer that is substantially free of defects that is present on the strained semiconductor layer. A gate structure may be present on a channel region of the fin structure, and source and drain regions may be present on opposing sides of the gate structure.
Claims8
A semiconductor device comprising;
- a fin structure with at least one fin having a doped porous core of a first composition semiconductor material and an undoped substantially non-porous outer layer on three sides, wherein the doped porous core provides a compliant body and comprises pores that are voids in the first composition semiconductor material, the fin structure encapsulated on the three sides in a single outer surface layer of a second composition semiconductor material that is free of porosity to provide that the doped porous core has a closed porosity from the ambient;
- a gate structure on a channel region portion of the fin structure;
- and
- source and drain regions present on opposing sides of the gate structure.
1 more element
Dependencies are inferred from the claim text.